Am29DL640G Data Sheet is a technology specification for a memory product released by AMD. This product has been retired and is not recommended for use.
The Am29DL640G is a 64‑Megabit CMOS flash memory device that operates on a single 3.0 V supply. It offers simultaneous read/write capability with zero latency, four configurable banks, and optional boot sectors. The device is designed for in‑system programming and supports standard EPROM programmers.
It is available in 48‑pin TSOP, 63‑ball fine‑pitch BGA, and 64‑ball fortified BGA packages. Key performance figures include access times as fast as 70 ns, low active read current (2 mA at 1 MHz), and standby current of 200 nA. The part provides 1 million erase cycles per sector and 20‑year data retention at 125 °C, and it is fully compatible with JEDEC flash command standards.
| Capacity | 64 Megabit (8 M × 8‑Bit/4 M × 16‑Bit) |
|---|---|
| Supply Voltage | 3.0 V (single‑supply) |
| Access Time | 70 ns (options 90 ns, 120 ns) |
| Active Read Current | 2 mA at 1 MHz |
| Standby Current | 200 nA (standby/auto‑sleep) |
| Erase Cycles | ≥ 1 million per sector |
| Data Retention | 20 years at 125 °C |
| Package Options | 48‑pin TSOP, 63‑ball Fine‑Pitch BGA, 64‑ball Fortified BGA |
| JEDEC Compatibility | Compatible with JEDEC single‑power‑supply flash command set |
The S29JLO64H (TSOP) and S29PL064J (FBGA) parts supersede the Am29DL640G.
The device guarantees a minimum of 1 million erase cycles per sector.
The standby (or automatic sleep) current is about 200 nA.
Yes, it is compatible with the JEDEC single‑power‑supply flash command set.