AMD Am41DL32x4G Datasheet

This document specifies the Spansion memory products offered by both Advanced Micro Devices and Fujitsu. The features and characteristics of these products remain unchanged, and they will be available to customers of both companies. Existing part numbers starting with 'Am' and 'MBM' are still supported for ordering.


AMD Am41DL32x4G Datasheet - cover page
Brand
Fujitsu
Category
Memory
Document type
Datasheet
Language
English
Pages
65
File format
PDF
File size
1.1 MB
Published
04 May, 2012
Updated
29 September, 2023
MD5 checksum
8216673A70CAF848ECA25437654595DA

About this manual

The Am41DL32x4G is a 32‑Megabit stacked multi‑chip package (MCP) flash memory with an integrated 4‑Mbit SRAM, operating from a single 3.0 V supply. It offers high‑performance access times as fast as 70 ns, simultaneous read/write operation with zero latency, and low‑power modes including standby current of 200 nA.

Key features include a 73‑ball FBGA package (8 × 11.6 mm), operating temperature range of –40 °C to +85 °C, and robust data protection mechanisms such as Secured Silicon (SecSi) sectors and hardware write‑protect pins. The device complies with JEDEC single‑power‑supply flash standards and provides extensive software support via AMD’s Data Management Software (DMS).

What's inside

  • Product Selector Guide
  • MCP Block Diagram
  • Device Bus Operations
  • Simultaneous Read/Write Operations
  • Power Management Features
  • Pin Description
  • Physical Dimensions
  • Special Handling Instructions

Specifications

Memory size (Flash)32 Megabit (4 M × 8‑Bit / 2 M × 16‑Bit)
Memory size (SRAM)4 Mbit (512 K × 8‑Bit / 256 K × 16‑Bit)
Supply voltage2.7 V to 3.3 V
Access time70 ns (fast)
Active read current (1 MHz)2 mA
Active read current (5 MHz)10 mA
Standby current200 nA
Write cycles per sector≥ 1 million
Data retention (125 °C)20 years
Package type73‑Ball FBGA, 8 × 11.6 mm
Operating temperature range-40 °C to +85 °C

Frequently asked questions

What supply voltage range does the Am41DL32x4G support?

It operates from 2.7 V to 3.3 V.

How fast is the access time of the flash memory?

The device can achieve access times as fast as 70 ns.

How many write cycles are guaranteed per sector?

Each sector is guaranteed for at least one million write cycles.

What is the data retention period at high temperature?

The memory retains data for 20 years at 125 °C.

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