The HN1A01F is a silicon PNP epitaxial transistor designed for audio frequency general‑purpose amplification. It is offered in a small dual‑type package suitable for high‑voltage and high‑current applications.
Key specifications include a collector‑base voltage of –50 V, collector‑emitter voltage of –50 V, maximum collector current of 150 mA, and a transition frequency of about 80 MHz. The device operates with a DC current gain (hFE) ranging from 120 to 240 and can be stored from –55 °C to 125 °C.
| Collector‑Base Voltage (VcBO) | -50 V |
|---|---|
| Collector‑Emitter Voltage (VCEO) | -50 V |
| Maximum Collector Current (Ic) | 150 mA |
| Maximum Base Current (Ib) | 30 mA |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range | -55 °C to 125 °C |
| DC Current Gain (hFE) | 120–240 |
The maximum collector current is 150 mA.
It can be stored from –55 °C up to 125 °C.