The Toshiba 2SK373 is an N‑channel junction‑type field‑effect transistor intended for audio, high‑voltage amplifier and constant‑current applications. The document lists its key electrical parameters, maximum ratings, and typical operating conditions.
Key sections include maximum ratings such as gate‑drain voltage and drain power dissipation, detailed electrical characteristics like gate cut‑off current and input capacitance, and notes on temperature ranges and reliability considerations.
| Gate‑Drain Voltage (Vgd) | -100 V (max) |
|---|---|
| Gate Current (Ig) | 10 mA |
| Drain Power Dissipation (Pd) | 400 mW |
| Junction Temperature (Tj) | 125 °C |
| Storage Temperature Range (Tstg) | -55 °C to 125 °C |
The maximum gate‑drain voltage is -100 V.
It can dissipate up to 400 mW of power.
The storage temperature range is -55 °C to 125 °C.