The 3SK258 is a dual‑gate N‑channel MOSFET designed for TV tuner, VHF RF amplifier and FM tuner applications. It offers low reverse transfer capacitance and a low noise figure, making it suitable for high‑frequency RF front‑end circuits.
Key specifications include a 13.5 V drain‑source voltage, 30 mA drain current, 100 mW power dissipation, and a typical noise figure of 1.1 dB. The device operates over a wide temperature range (‑55 °C to 125 °C) and is packaged in a small 0.006 g form factor. The datasheet also contains test circuit diagrams and detailed conductance parameters.
| Drain‑Source Voltage (VDS) | 13.5 V |
|---|---|
| Gate‑1 Source Voltage (VGS1) | ±8 V |
| Gate‑2 Source Voltage (VGS2) | ±8 V |
| Drain Current (ID) | 30 mA |
| Drain Power Dissipation (PD) | 100 mW |
| Noise Figure (NF) | 1.1 dB (typ) |
| Reverse Transfer Capacitance (Cgg) | 0.015 pF (typ) |
| Weight | 0.006 g |
The device is rated for a maximum drain‑source voltage of 13.5 V.
The typical noise figure is 1.1 dB.
It is intended for TV tuner, VHF RF amplifier and FM tuner applications.