Toshiba 2SK2964 MOSFET Datasheet


Toshiba 2SK2964 MOSFET Datasheet - cover page
Brand
Toshiba
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
5
File format
PDF
File size
278 KB
Published
03 May, 2012
Updated
03 May, 2012
MD5 checksum
4764923AEC6528817AC19455F91707D2

About this manual

The 2SK2964 is a silicon N‑channel MOSFET designed for high‑speed, high‑current switching applications such as chopper regulators, DC‑DC converters, and motor drives. It is an enhancement‑mode device with a typical gate threshold voltage of 0.8‑2.0 V.

Key specifications include a maximum drain‑source voltage of 30 V, a typical on‑resistance of 0.13 Ω, and low leakage currents. The datasheet also lists thermal resistance, safe operating area, and source‑drain diode characteristics for reliable design use.

What's inside

  • Electrical Characteristics
  • Maximum Ratings
  • Thermal Characteristics
  • Source‑Drain Diode Ratings
  • Safe Operating Area
  • Packaging
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