The 2SA1297 is a silicon PNP epitaxial transistor designed for power amplifier and power switching applications. The datasheet lists its maximum ratings, electrical characteristics, and safe operating area to aid designers in selecting and using the device.
Key specifications include collector‑base voltage of 20 V, collector‑emitter voltage of 20 V, a collector current rating of 2 A, and a typical DC current gain (hFE) of 120‑240. Temperature limits, power dissipation, and transition frequency are also provided for reliable circuit design.
| Collector‑Base Voltage (V CBO) | -20 V |
|---|---|
| Collector‑Emitter Voltage (V CEO) | -20 V |
| Emitter‑Base Voltage (V EBO) | 6 V |
| Collector Current (I C) | -2 A |
| Base Current (I B) | -0.5 A |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Collector Power Dissipation (P D) | 400 mW |
| DC Current Gain (hFE) | 120‑240 |
The maximum collector current is 2 A.
The collector‑emitter voltage rating is 20 V.
The typical DC current gain (hFE) ranges from 120 to 240.
The device can be stored from –55 °C up to 150 °C.