The SH400R32B is an alloy‑free high‑speed thyristor designed for high‑power control applications. It offers a repetitive peak off‑state voltage of 1300 V and can handle an average on‑state current of 400 A.
The datasheet lists detailed maximum ratings, electrical characteristics, and surge on‑state current behavior, including turn‑off time (258 ns max), critical di/dt (200 A/µs), and dv/dt (500 V/µs), as well as thermal limits and gate power dissipation values.
| Repetitive Peak Off‑State Voltage (VpRM) | 1300 V |
|---|---|
| Average On‑State Current (Iav) | 400 A |
| Turn‑Off Time (tg) | 258 ns (max) |
| Critical Rate of Rise of Off‑State Voltage (dv/dt) | 500 V/µs |
| Peak Gate Power Dissipation (Pgm) | 20 W |
| Average Gate Power Dissipation (PG(av)) | 4 W |
| Peak Forward Gate Current (IGM) | 4 A |
| Junction Temperature Range (Tj) | -40~115 °C |
| Weight | 480 g |
The device is rated for a repetitive peak off‑state voltage of 1300 V.
It can carry an average on‑state current of 400 A.
The turn‑off time is specified as 258 ns maximum.
The junction temperature can operate from –40 °C to 115 °C.