This document describes the features and characteristics of Philips Semiconductors' BU508AW silicon diffused power transistor. It is a high voltage, high-speed switching NPN transistor primarily used in the horizontal deflection circuits of color television receivers.
The BU508AW is a high‑voltage, high‑speed switching NPN power transistor designed primarily for horizontal deflection circuits in colour television receivers. It is supplied in a plastic SOT429 package and includes detailed electrical and thermal ratings.
Key specifications include a collector‑emitter voltage rating of 1500 V, a continuous collector current of 8 A (peak 15 A), and a maximum power dissipation of 125 W at 25 °C. The device also features a transition frequency of 5 MHz, saturation voltage around 1.0 V, and operates within a storage temperature range of –65 °C to 150 °C.
| Collector‑emitter voltage (VCEmax) | 1500 V |
|---|---|
| Continuous collector current (IC) | 8 A |
| Peak collector current (IC peak) | 15 A |
| Maximum power dissipation (PD) | 125 W |
| Collector‑emitter saturation voltage (VCEsat) | 1.0 V |
| Transition frequency (ft) | 5 MHz |
| Junction temperature (Tj) | 150 °C |
| Storage temperature range | -65 °C to 150 °C |
| Package | SOT429 |
The BU508AW can withstand a collector‑emitter voltage of up to 1500 V.
The device can dissipate up to 125 W when mounted on a heatsink at 25 °C.
It is supplied in an SOT429 plastic package.
The transition frequency is specified as 5 MHz.