The NIF62514 is an advanced series of power MOSFETs which utilize ON Semiconductor's latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features.
The NIF62514 is a self‑protected power MOSFET featuring integrated thermal and current limits, a drain‑to‑gate clamp for avalanche protection, and ESD protection via a gate‑to‑source clamp. It is offered in a Pb‑free SOT‑223 package and includes features such as low on‑resistance, slew‑rate control, and over‑voltage clamped protection.
The datasheet lists maximum ratings such as 40 V drain‑to‑source voltage, 16 V gate‑to‑source voltage, 6 A continuous drain current, and a typical on‑resistance of 90 mΩ. It also provides avalanche energy (300 mJ), operating temperature range (‑55 °C to 150 °C), and detailed ordering and package dimension information.
| Drain-to-Source Voltage (Vds) | 40 V |
|---|---|
| Gate-to-Source Voltage (Vgs) | 16 V |
| Continuous Drain Current (Id) | 6.0 A |
| On‑Resistance (Rds(on)) | 90 mΩ |
| Avalanche Energy | 300 mJ |
| Operating Temperature Range | -55 °C to 150 °C |
| Package | SOT‑223 (TO‑261) |
The maximum drain‑to‑source voltage is 40 V.
The typical on‑resistance is 90 mΩ.
It is offered in a SOT‑223 (TO‑261) package.
The device is rated for a continuous drain current of 6 A.