The NTD78N03 is a power MOSFET from Semiconductor Components Industries, LLC. It features low RDS(on), optimized gate charge and lead-free packages are available. It can be used in desktop VCORE, DC-DC converters and low side switch applications.
The NTD78N03 power MOSFET offers a 25 V drain‑to‑source rating and up to 78 A continuous drain current, making it suitable for desktop V‑CORE, DC‑DC converters and low‑side switching applications. Key features include low on‑resistance, optimized gate charge and availability in lead‑free packages.
The datasheet provides detailed electrical characteristics, thermal resistance data, package dimensions for DPAK and IPAK styles, and ordering information for both standard and Pb‑free variants. It also includes typical performance graphs such as transfer characteristics and on‑resistance versus drain current.
| Drain‑to‑Source Voltage (VDS) | 25 V |
|---|---|
| Gate‑to‑Source Voltage (VGS) | 20 V |
| Continuous Drain Current (Id) @ 25 °C | 14.8 A |
| Continuous Drain Current (Id) @ 85 °C | 15 A |
| Power Dissipation (PD) @ 25 °C | 2.3 W |
| On‑Resistance (RDS(on)) typical | 46 mΩ (VGS=10 V, ID=78 A) |
| Total Gate Charge (Qg) | 25.5 nC |
| Input Capacitance (Ciss) | 1.92 nF |
| Package Type | DPAK (straight‑lead, bend‑lead) and IPAK |
| Lead‑Free Option | Available (package code ending with G) |
The device is rated for a maximum drain‑to‑source voltage of 25 V.