The BS170 / MMBF170 N-Channel Enhancement Mode Field Effect Transistor is a high density charge modulated field effect transistor manufactured by Fairchild Semiconductor Corporation. It features low on-state resistance and high saturation current capability.
The Fairchild BS170 and MMBF170 are N‑Channel enhancement mode field‑effect transistors designed for low‑voltage, low‑current applications such as small servo motor control and MOSFET gate drivers. They feature a high‑density DMOS cell design that minimizes on‑state resistance while providing rugged and fast switching performance.
The document provides absolute maximum ratings, detailed electrical characteristics, thermal behavior, switching times, and package dimensions for both the TO‑92 (BS170) and SOT‑23 (MMBF170) versions. It also includes tape‑and‑reel data, trademark information, and product status definitions.
| Drain‑Source Voltage (VDSS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGSS) | ±20 V |
| Pulsed Drain Current (ID) | 1200 mA |
The maximum drain‑source voltage (VDSS) is 60 V.
No, Fairchild states the products are not authorized for use in life‑support devices without written approval.