This document describes the features and characteristics of a 200V N-channel MOSFET product, including the worldwide lowest gate charge, typical on-resistance, high dv/dt and avalanche capabilities, low input capacitance, and low gate resistance. The product is ideal for use as a primary switch in isolated DC-DC converters for telecom and computer applications, and can be combined with secondary-side low-voltage STripFET products to reduce losses and boost efficiency.
The STD22NM20N is a 200 V N‑channel MOSFET offered in a TO‑252 (DPAK) package. It features ultra‑low gate charge, low on‑resistance and high avalanche capability, making it suitable for high‑efficiency power conversion applications.
The document provides absolute maximum ratings, electrical characteristics, thermal data, mechanical dimensions, and recommended PCB footprints, along with revision history and legal notices.
| Drain‑source Voltage (Vds) | 200 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 22 A |
The device can handle a continuous drain current of 22 A at 25 °C.
It is supplied in a TO‑252 (DPAK) package.