STMICROELECTRONICS STD2NK70Z - STD2NK70Z-1 User Manual

STD2NK70Z-STD2NK70Z-1 is a N-channel 700V - 6 ohm - 1.6A DPAK/IPAK Zener-Protected SuperMESH™ MOSFET.


STMICROELECTRONICS STD2NK70Z - STD2NK70Z-1 User Manual - cover page
Brand
STMicroelectronics
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
12
File format
PDF
File size
306 KB
Published
11 April, 2012
Updated
30 September, 2023
MD5 checksum
8DC01E0E627DDFE0142AF57B5A535FBA

About this manual

The STD2NK70Z is a 700 V N‑channel MOSFET offered in DPAK and IPAK packages. It features a low on‑resistance, high dv/dt capability, and built‑in gate‑source Zener diodes for enhanced ESD protection. The device is suited for high‑voltage applications such as SMPS, welding equipment, flyback converters, and battery chargers.

The document includes absolute maximum ratings, thermal characteristics, avalanche specifications, electrical characteristics, and mechanical dimensions. It also provides typical performance curves, safe operating area diagrams, and test circuit schematics for switching and inductive load testing.

What's inside

  • General Features
  • Description
  • Applications
  • Absolute Maximum Ratings
  • Thermal Data
  • Avalanche Characteristics
  • Gate‑Source Zener Diode
  • Electrical Characteristics
  • Mechanical Data
  • Revision History

Specifications

Drain‑source voltage (Vds)700 V
Continuous drain current (Id) at 25 °C1.6 A
Pulsed drain current (Id,pulse)6.4 A
On‑resistance (Rds(on))72 mΩ
Maximum power dissipation45 W
Gate‑source Zener breakdown voltage30 V
Avalanche energy (Eas)110 mJ
Thermal resistance junction‑case (Rθjc)2.78 °C/W
Storage temperature range-55 °C to 150 °C

Frequently asked questions

What is the maximum drain‑source voltage rating?

The device is rated for a maximum drain‑source voltage of 700 V.

What continuous drain current can the MOSFET handle at 25 °C?

It can conduct up to 1.6 A continuously at 25 °C.

What is the typical on‑resistance of the STD2NK70Z?

The typical on‑resistance is 72 mΩ.

Does the device include any protection features?

Yes, it has built‑in back‑to‑back gate‑source Zener diodes that improve ESD capability and protect against voltage transients.

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