PMV45EN µTrenchMOS™ enhanced logic level FET is an N-channel enhancement mode field-effect transistor using TrenchMOS™ technology. The product is available in SOT23 package and can be used for surface mount package, fast switching, battery management, high speed switch, etc.
The PMV45EN is an N‑channel enhancement mode field‑effect transistor in a SOT‑23 package using TrenchMOS technology. It is intended for battery‑management and high‑speed switching applications.
The document provides detailed electrical characteristics, thermal data, pin configuration, and package outline, along with limiting values and safety information for designers.
| Gate‑source voltage (VGS) max | 20 V |
|---|---|
| Junction temperature range | -55 °C to +150 °C |
| Output capacitance (Coss) | 70 pF |
| Reverse transfer capacitance (Crss) | 50 pF |
The device operates from –55 °C to +150 °C.