The STP35NF10 is a N-channel MOSFET from STMicroelectronics with a rated voltage of 100V, a typical on-resistance of 0.030 ohms and a maximum current of 40A. The device features low input capacitance and low gate charge, making it suitable for high-efficiency DC-DC converters, UPS and motor control applications.
The STP35NF10 and STB35NF10 are N‑channel 100 V power MOSFETs designed for low gate charge and input capacitance, making them suitable for high‑efficiency DC‑DC converters, UPS systems and motor‑control applications. The devices are offered in TO‑220 and DPAK packages.
Key specifications include a continuous drain current of 40 A at 25 °C, a pulsed current rating of 160 A, a typical on‑resistance of 0.030 Ω, and a total power dissipation of 115 W. Thermal resistance values, capacitance parameters and mechanical dimensions are detailed for design integration.
| Drain‑source Voltage (Vds) | 100 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 40 A |
| Pulsed Drain Current (Id,pulse) | 160 A |
| Total Power Dissipation (Pd) | 115 W |
| Output Capacitance (Coss) | 220 pF |
| Maximum Lead Temperature for Soldering | 300 °C |
| Storage Temperature Range | -55 to 175 °C |
The device can handle a continuous drain current of 40 A at a junction temperature of 25 °C.
It is intended for high‑efficiency DC‑DC converters, UPS systems and motor‑control applications.
The MOSFET is offered in TO‑220 and DPAK (D‑PAK) packages.