STP80NF55-08/-1 STB80NF55-08 is a low-on-resistance N-channel power MOSFET with a maximum voltage of 55V and a typical on-resistance of 0.0065 ohms. It can be used in a variety of circuits, such as solenoid and relay drivers, audio amplifiers, DC-DC converters, and automotive environments.
The STP80NF55-08 and STB80NF55-08 are N‑channel Power MOSFETs built with STMicroelectronics' Single Feature Size™ strip‑based process, offering low on‑resistance, high current capability and rugged avalanche performance. They are intended for applications such as solenoid and relay drivers, motor control, audio amplifiers, DC‑DC converters and automotive environments.
The datasheet provides detailed absolute maximum ratings, typical electrical characteristics, switching performance, thermal data, and mechanical dimensions for D2PAK, TO‑220 and TO‑262 packages. Users can reference the tables for parameters like drain‑source voltage, on‑resistance, gate charge and thermal resistance to ensure proper design and reliability.
| Drain‑Source Voltage (VDS) | 55 V |
|---|---|
| Continuous Drain Current (Id) at 25 °C | 80 A |
| Typical On‑Resistance (RDS(on)) | 0.0065 Ω |
| Maximum Power Dissipation | 300 W |
| Thermal Resistance Junction‑Case | 0.5 °C/W |
| Thermal Resistance Junction‑Ambient | 62.5 °C/W |
| Gate Threshold Voltage (VGS(th)) | 2‑4 V |
| Input Capacitance (Ciss) | 3850 pF |
| Output Capacitance (Coss) | 800 pF |
The device can handle a continuous drain current of 80 A at 25 °C.
Typical on‑resistance is 0.0065 Ω.
The MOSFET is offered in D2PAK, TO‑220 and TO‑263 (TO‑262) packages.
The part is rated for up to 300 W of total dissipation at 25 °C.