TPI8011N/TPI12011N is a bidirectional triple crowbar protection device produced by STMicroelectronics, which can be used for ISDN interface and high speed data telecom line protection.
The TPI8011N and TPI12011N are application‑specific discrete devices offering bidirectional triple crowbar protection for ISDN and high‑speed telecom lines. Features include a peak pulse current of 30 A, breakdown voltages of 80 V (TPI8011N) and 120 V (TPI12011N), and low dynamic breakover voltages of 150 V and 200 V respectively. The devices are supplied in SO‑8 plastic packages and are designed with a 4‑point internal wire‑bonding structure to minimise over‑voltages caused by parasitic inductance.
The datasheet details absolute maximum ratings, thermal resistances, electrical and capacitance characteristics, test circuits, packaging information, and mechanical dimensions. It also includes ordering codes, marking conventions, and compliance notes for relevant standards such as CCITT K17‑K20 and VDE 0433.
| Peak pulse current | 30 A (10/1000 µs) |
|---|---|
| Breakdown voltage (TPI8011N) | 80 V |
| Breakdown voltage (TPI12011N) | 120 V |
| Low dynamic breakover voltage (TPI8011N) | 150 V |
| Low dynamic breakover voltage (TPI12011N) | 200 V |
| Storage temperature range | -55 °C to +150 °C |
| Maximum junction temperature | 150 °C |
| Maximum lead temperature for soldering (10 s) | 260 °C |
The devices can handle a peak pulse current of 30 A for a 10 µs rise time and 1000 µs pulse width.
TPI8011N has a breakdown voltage of 80 V, while TPI12011N is rated at 120 V.
They are specified for storage from –55 °C up to +150 °C.