Fairchild Semiconductor FCP20N60 / FCPF20N60 Datasheet

This datasheet provides detailed information on Fairchild FCP20N60 / FCPF20N60 600V N-Channel MOSFET SuperFETTM features and characteristics.


Fairchild Semiconductor FCP20N60 / FCPF20N60 Datasheet - cover page
Brand
Fairchild
Category
Power Management
Document type
Datasheet
Language
English
Pages
10
File format
PDF
File size
1.2 MB
Published
11 April, 2012
Updated
30 September, 2023
MD5 checksum
ECE3AEFAF8F42F1FD41DFAA1D07E9673

About this manual

The FCP20N60 and FCPF20N60 are 600 V N‑Channel MOSFETs from Fairchild Semiconductor’s SuperFET™ family. They feature ultra‑low gate charge (typ. Qg ≈ 75 nC) and low on‑resistance, making them suitable for high‑efficiency AC/DC power conversion.

The document provides absolute maximum ratings, detailed electrical characteristics, thermal resistance values, mechanical package dimensions, and test circuit waveforms. It also includes product status definitions and trademark information.

What's inside

  • Features Description
  • Absolute Maximum Ratings
  • Thermal Characteristics
  • Package Marking and Ordering Information
  • Electrical Characteristics
  • Typical Performance Characteristics
  • Mechanical Dimensions
  • Test Circuit Waveforms
  • Product Status Definitions
  • Trademarks

Specifications

Drain‑Source Voltage (VDS)600 V
Typical On‑Resistance (RDS(on))9.152 mΩ
Junction‑to‑Case Thermal Resistance0.6 °C·W
Junction‑to‑Ambient Thermal Resistance62.5 °C·W
Effective Output Capacitance (COSS,eff)165 pF

Frequently asked questions

What is the maximum drain‑source voltage for the FCP20N60?

The maximum drain‑source voltage is 600 V.

What is the junction‑to‑case thermal resistance of the device?

The junction‑to‑case thermal resistance is 0.6 °C·W.

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