This document describes the features and characteristics of the 2N7000 / 2N7002 / NDS7002A N-Channel Enhancement Mode Field Effect Transistors in November 1995. These transistors are produced using Fairchild's proprietary high cell density DMOS technology, which minimizes on-state resistance and provides rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400mA DC and can deliver pulsed currents up to 2A. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications.
This datasheet provides the design specifications for three Fairchild N‑channel enhancement mode MOSFETs (2N7000, 2N7002 and NDS7002A). It includes absolute maximum ratings, electrical and dynamic characteristics, thermal data, and safe‑operating‑area diagrams.
The document also contains product status information, trademark notices, and a disclaimer that these devices are not authorized for use in life‑support equipment without explicit approval from Fairchild Semiconductor. This manual is written in Chinese.
| Drain‑Source Voltage (VDSS) | 60 V |
|---|---|
| Gate‑Source Voltage (VGSS) | ±20 V |
| Maximum Continuous Drain Current (ID) | 200 mA (2N7000), 115 mA (2N7002), 280 mA (NDS7002A) |
| On‑Resistance (RDS(ON)) | 1.2 Ω (2N7000), 1.9 Ω (2N7002), 2.4 Ω (NDS7002A) at VGS=10 V, ID=500 mA |
| Maximum Power Dissipation (PD) | 400 mW (2N7000), 200 mW (2N7002), 300 mW (NDS7002A) |
The 2N7000 can handle a continuous drain current of 200 mA.
No, Fairchild states that its products are not authorized for use as critical components in life‑support devices without written approval.