The PMV31XN µTrenchMOS™ is an N-channel enhancement mode field-effect transistor using TrenchMOS™ technology. It features very fast switching, low threshold voltage, and a surface mount package.
The PMV31XN is an N‑channel enhancement mode field‑effect transistor built with Philips' iTrenchMOS™ technology. It is supplied in a plastic SOT23 surface‑mount package and is intended for battery‑powered motor control and high‑speed switching in set‑top‑box power supplies.
The document lists key electrical parameters such as a maximum drain‑source voltage of 20 V, a continuous drain current of 5.9 A, and a typical on‑state resistance of 31‑37 mΩ. Thermal characteristics, pin assignments, and detailed characteristic curves are also provided to aid designers in integrating the device into their circuits.
| Typical On‑State Resistance (RDS(on)) | 31‑37 mΩ |
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The PMV31XN is offered in a plastic SOT23 surface‑mount package.