PH3830L N-channel TrenchMOS™ logic level FET is a N-channel enhancement mode field-effect power transistor manufactured by Philips Semiconductors. It is packaged in SOT669 (LFPAK) with low thermal resistance, SO8 equivalent area footprint, logic level gate drive, and low on-state resistance. It is used in DC-to-DC converters, switched-mode power supplies, portable appliances, and notebook computers.
The PH3830L is an N‑channel enhancement‑mode power MOSFET built with TrenchMOS™ technology and offered in a plastic LFPAK (SOT‑669) package. It is intended for use in DC‑DC converters, switched‑mode power supplies, portable appliances and notebook computers.
The document lists the device’s pin configuration, ordering information, absolute maximum ratings, thermal characteristics, and detailed static and dynamic electrical characteristics such as drain current limits, on‑state resistance and capacitances.
| Maximum gate‑source voltage (VGS) | 20 V |
|---|---|
| Junction temperature range | -55 °C to +150 °C |
The gate‑source voltage may be applied up to ±20 V.