This data sheet describes the features of the PHN110 N-channel enhancement mode MOS transistor. The device features high-speed switching, no secondary breakdown, and very low on-resistance. It is mainly used in motor and actuator driver, power management, and synchronized rectification applications.
The PHN110 is an N‑channel enhancement mode MOS transistor offered by Philips Semiconductors in an 8‑pin plastic SOT96‑1 (SO‑8) package. It is intended for high‑speed switching applications such as motor and actuator drivers, power management, and synchronized rectification.
The document lists key electrical limits, thermal characteristics, and typical performance curves, including voltage ratings, current capabilities, on‑resistance, capacitances, and gate charge. Contact and worldwide sales information are provided at the end of the sheet.
| Drain‑source voltage (VDS) max | 30 V |
|---|---|
| Gate‑source voltage (VGS) max | +20 V |
| Continuous drain current (ID) max | 4 A |
| Peak drain current (ID,peak) | 16 A |
| Total power dissipation (PD) max | 2.8 W |
| Storage temperature range | -65 °C to +150 °C |
| Junction temperature range | -65 °C to +150 °C |
| On‑state resistance (RDS(on)) typical | 0.11 Ω |
The PHN110 can withstand up to 30 V drain‑source voltage.
The device is rated for a continuous drain current of 4 A at 80 °C.
It operates from –65 °C up to +150 °C for both storage and junction temperatures.
The transistor is supplied in an 8‑pin plastic SOT96‑1 (SO‑8) package.