This document describes the features and characteristics of the PDTC114ET NPN resistor-equipped transistor. The transistor has built-in bias resistors, which simplifies circuit design and reduces the number of components and board space. It is especially suitable for space reduction in interface and driver circuits, as well as inverter circuit configurations without the use of external resistors.
The PDTC114ET is an NPN resistor‑equipped transistor offered by Philips Semiconductors. It features built‑in bias resistors (typically 10 kΩ each) that simplify circuit design and reduce component count, making it suitable for space‑constrained interface and driver circuits.
The device is supplied in a plastic SOT23 surface‑mount package and includes detailed electrical limits such as a 50 V collector‑base voltage, 100 mA maximum collector current, and a 250 mW power dissipation rating. It is not intended for life‑support applications.
| Storage temperature | -65 °C to +150 °C |
|---|---|
| Junction temperature | 150 °C (max) |
| Built‑in bias resistor (Ri, R2) | 10 kΩ each (typ.) |
The built‑in bias resistors Ri and R2 are typically 10 kΩ each.
It is supplied in a plastic SOT23 surface‑mount package.
No, the product is not designed for life‑support appliances or systems.