This datasheet provides SPI80N06S2-07,SPP80N06S2-07,SPB80N06S2-07 OptiMOS Power-Transistor product characteristics, including model, package, maximum current, maximum power consumption, maximum operating temperature, etc.
The SPI80N06S2-07 series are N‑channel enhancement‑mode OptiMOS power transistors rated for up to 80 A continuous drain current and 550 V drain‑source breakdown voltage. The document provides electrical, thermal, and dynamic characteristics, as well as safe operating area graphs.
Key parameters include a continuous drain current of 80 A, pulsed drain current of 320 A, power dissipation of 250 W, and an operating temperature range up to +175 °C. Detailed specifications for gate charge, on‑resistance, avalanche energy, and reverse diode behavior are also listed.
| Power dissipation (Pd) | 250 W |
|---|---|
| Drain‑source breakdown voltage (Vds) | ≈550 V |
| Gate charge total (Qg) | 86‑110 nC |
The maximum power dissipation is 250 W at 25 °C.
The single‑pulse avalanche energy is specified as 530 mJ.