This document is the datasheet of TLP130 photocoupler. It introduces the features and characteristics of this product, such as current transfer ratio, isolation voltage, maximum current.
The Toshiba TLP130 is a miniature GaAs infrared photocoupler designed for surface‑mount assembly. It integrates a photo‑transistor optically coupled to an infrared emitting diode and is suitable for a wide range of electronic applications.
The document provides maximum ratings, recommended operating conditions, electrical characteristics, isolation and switching performance, as well as usage restrictions for safety‑critical designs.
| Collector‑emitter voltage (VCEO) | 80 V (min) |
|---|---|
| Isolation voltage | 3750 Vrms (min) |
| Power dissipation (PØ) | 150 mW |
| Supply voltage (VEC) | 5 V to 48 V |
The isolation voltage is specified as 3750 Vrms minimum.
The device can withstand a collector‑emitter voltage of at least 80 V.
The recommended supply voltage is between 5 V and 48 V.