TLP130 is a small outline coupler suitable for surface mount assembly. It consists of a photo transistor and two gallium arsenide infrared emitting diodes connected in inverse parallel. It is directly driven by AC input current. The features include: collector-emitter voltage of 80V (minimum), current transfer ratio of 50% (minimum), isolation voltage of 3750Vrms (minimum), UL recognized, etc.
The TLP130 is a miniature surface‑mount GaAs infrared photocoupler that integrates an infrared emitting diode and a photo‑transistor. It is intended for general electronics applications such as computers, office equipment, measuring devices, and industrial robotics.
Key specifications include a collector‑emitter voltage rating of 80 V, isolation voltage of 3750 Vrms, forward current of 50 mA, power dissipation of 150 mW, and a junction temperature limit of 125 °C. The device operates over a temperature range of –55 °C to 100 °C and offers a current transfer ratio (CTR) of at least 50 %.
| Collector‑emitter voltage (VCEO) | 80 V |
|---|---|
| Forward current (IF RMS) | 50 mA |
| Power dissipation (Po) | 150 mW |
| Junction temperature (Tj) | 125 °C |
The maximum collector‑emitter voltage is 80 V.
A supply voltage between 5 V and 48 V is recommended.