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- Brand
- STMicroelectronics
- Model
- STP7NB30FP
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- Industrial
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- EN
- Last added
- 2012-04-01
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STMicroelectronics STP7NB30/STP7NB30FP Power MOSFET Datasheet
The STP7NB30 and STP7NB30FP are high‑voltage N‑channel power MOSFETs built on STMicroelectronics' MESH™ overlay process. They feature very low on‑resistance, high avalanche capability, fast switching and minimized gate charge, making them suitable for demanding power conversion applications.
Typical applications include high‑current, high‑speed switching, switch‑mode power supplies, DC‑AC converters for welding equipment, uninterruptible power supplies and motor drives. The document lists absolute maximum ratings, thermal data, detailed electrical characteristics, switching parameters and mechanical dimensions for both the TO‑220 and TO‑220FP packages.
STMicroelectronics STP7NB30FP specifications
| Drain‑source voltage (VDS) | 300 V |
|---|---|
| Gate‑source voltage (VGS) | +30 V |
| Continuous drain current (ID) at 25 °C | 7 A (STP7NB30) / 4 A (STP7NB30FP) |
| Continuous drain current (ID) at 100 °C | 4.4 A (STP7NB30) / 2.5 A (STP7NB30FP) |
| On‑resistance (RDS(on)) typical | 0.75 Ω (STP7NB30) / 0.90 Ω (STP7NB30FP) |
| Maximum power dissipation (PD) | 85 W (STP7NB30) / 30 W (STP7NB30FP) |
| Avalanche current (IAval) | 7 A |
| Total gate charge (Qg) | 17 nC |
Source: STMicroelectronics STP7NB30/STP7NB30FP Power MOSFET Datasheet
All STMicroelectronics STP7NB30FP documents by type
Ratings, dimensions and ordering codes, for selection and design work.
Questions answered in these manuals
What is the maximum drain‑source voltage for the STP7NB30 and STP7NB30FP?
Both devices are rated for a maximum drain‑source voltage of 300 V.
From: STMicroelectronics STP7NB30/STP7NB30FP Power MOSFET Datasheet
What is the typical on‑resistance of the STP7NB30 and STP7NB30FP?
The typical on‑resistance is 0.75 Ω for the STP7NB30 and 0.90 Ω for the STP7NB30FP.
From: STMicroelectronics STP7NB30/STP7NB30FP Power MOSFET Datasheet