Korea Electronics TIP127 Epitaxial Planar PNP Transistor Datasheet


Korea Electronics TIP127 Epitaxial Planar PNP Transistor Datasheet - cover page
Brand
KEC
Category
Other Electronics
Document type
Datasheet
Language
English
Pages
2
File format
PDF
File size
233 KB
Published
01 April, 2012
Updated
30 May, 2012
MD5 checksum
AB0B56D16E9B93763640517D894CF24F

About this manual

The TIP127 is an epitaxial planar PNP transistor presented by Korea Electronics. The datasheet provides electrical characteristics, ratings, and package information for use in switching applications such as hammer drivers and motor drivers.

Key parameters include a DC current gain of 1000, collector breakdown voltage of -120 V, and a TO‑220AB package. Storage temperature range is –55 °C to 150 °C, and the device can dissipate up to 65 W.

What's inside

  • Technical Data
  • Features
  • Electrical Characteristics
  • Characteristic Symbol Table
  • Revision Information

Specifications

DC Current Gain (hFE)1000
Base Current (IB)-0.12 A
Collector Current (IC)8 A
Power Dissipation (Collector)65 W
Junction Temperature (TJ)150 °C
Storage Temperature Range-55 °C to 150 °C
PackageTO-220AB

Frequently asked questions

What is the DC current gain of the TIP127 transistor?

The TIP127 has a DC current gain of 1000.

What is the recommended storage temperature range?

The device can be stored between –55 °C and 150 °C.

Which package type does the TIP127 use?

It is supplied in a TO‑220AB package.

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