This document provides the technical data and features of the KRA521T~KRA526T epitaxial planar PNP transistor. The transistor has built-in bias resistors, simplifying circuit design and reducing the quantity of parts and manufacturing process. It has a high output current of -800mA.
This datasheet presents the technical data for KEC's KRA521T through KRA526T epitaxial planar PNP transistors, intended for high‑current switching, interface, and driver circuit applications. Key features include built‑in bias resistors, simplified circuit design, and reduced part count.
The document lists the equivalent circuit, maximum ratings such as output current and power dissipation, and detailed electrical characteristics for each model variant, along with package dimensions and marking information.
| Maximum Output Current | -800 mA |
|---|---|
| Power Dissipation | 0.9 W |
| Junction Temperature | 150 °C |
| Storage Temperature Range | -55 °C ~ 150 °C |
| Transition Frequency | 200 MHz |
The maximum output current is -800 mA.
The power dissipation rating is 0.9 W.
The junction temperature limit is 150 °C.