The KTD1413 is an epitaxial planar NPN transistor designed for power switching applications such as hammer drivers and pulse motor drivers.
It offers a high DC current gain of at least 2000, a collector‑emitter voltage rating of 100 V, and can handle up to 5 A of collector current with a power dissipation of 25 W. The device operates from 35 °C to 150 °C and includes detailed electrical characteristics in the datasheet.
| Collector-Base Voltage (Vcb) | 150 V |
|---|---|
| Collector-Emitter Voltage (Vce) | 100 V |
| Emitter-Base Voltage (Veb) | 7 V |
| Collector Current (Ic) | 5 A |
| Base Current (Ib) | 0.5 A |
| Collector Power Dissipation (Pc) | 25 W |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | 35 – 150 °C |
| DC Current Gain (hFE) min | 2000 |
| Saturation Voltage (Vce(sat)) max | 1.3 V at 3 A |
| Fall Time (tf) | 12 µs |
The KTD1413 can handle a collector current up to 5 A.
The device is rated for a collector‑emitter voltage of 100 V.
The transistor has a minimum DC current gain of 2000 at Vce = 2 V and Ic = 3 A.
The saturation voltage is 1.3 V when the collector current is 3 A.