KTC601E is a high performance double transistor with high pairing property and super miniaturized package. It has wide applications including general purpose and switching applications.
The KEC KTC601E is an epitaxial planar NPN transistor intended for general‑purpose and switching applications. The datasheet provides the electrical parameters, maximum ratings, and characteristic curves needed for circuit design.
Key specifications include a collector‑base voltage of 60 V, collector‑emitter voltage of 50 V, emitter‑base voltage of 5 V, a maximum collector current of 150 mA, and a power dissipation rating of 200 mW. The device operates over a storage temperature range of –55 °C to 150 °C and features a transition frequency around 80 MHz.
| Collector‑Base Voltage (Vcbo) | 60 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | 50 V |
| Emitter‑Base Voltage (Vebo) | 5 V |
| Maximum Collector Current (Ic) | 150 mA |
| Maximum Base Current (Ib) | 30 mA |
| Collector Power Dissipation (Pd) | 200 mW |
| Storage Temperature Range | -55 °C to 150 °C |
| Transition Frequency (fT) | ≈ 80 MHz |
The collector‑base voltage rating is 60 V.
It can be stored from –55 °C up to 150 °C.
The maximum collector current is 150 mA.
The device can dissipate up to 200 mW.