KTX201E is a TESV package NPN/PNP dual tube
The KEC KTX201E is an epitaxial planar NPN/PNP transistor intended for general‑purpose applications. The datasheet provides the device’s electrical characteristics, maximum ratings, and typical performance curves.
Key data include voltage limits, current capabilities, power dissipation, and frequency response, allowing designers to evaluate suitability for circuit designs and to simplify component selection.
| Collector‑Base Voltage (Vcbo) | -50 V |
|---|---|
| Collector‑Emitter Voltage (Vceo) | -50 V |
| Emitter‑Base Voltage (Vebo) | -5 V |
| Collector Current (Ic) | 150 mA |
| Base Current (Ib) | 30 mA |
| Collector Power Dissipation (Ptot) | 200 mW |
| Junction Temperature (Tj) | 150 °C |
| Storage Temperature Range | -55 °C to 150 °C |
| Transition Frequency (fT) | 80 MHz |
| Collector Output Capacitance (Cc) | 4.0 – 7.0 pF |
| Noise Figure (NF) | 10 dB |
The maximum collector‑emitter voltage is -50 V.
The transition frequency is specified as 80 MHz.
The transistor can dissipate up to 200 mW of power.
It can be stored from -55 °C up to 150 °C.