The KEC BC337 datasheet provides detailed electrical data for the epitaxial planar NPN transistor, intended for general‑purpose and switching applications. It lists key parameters such as voltage ratings, current limits, gain, and power dissipation.
Key specifications include a maximum collector current of 800 mA, collector‑emitter voltage rating of 45 V, collector‑base voltage of 50 V, DC current gain (hFE) of 100‑400, and a power dissipation rating of 625 mW. The document also gives typical values for base‑emitter voltage, transition frequency, and cutoff current.
| Collector Current (Ic) Max | 800 mA |
|---|---|
| Collector-Emitter Voltage (VCEo) Max | 45 V |
| Collector-Base Voltage (VCBo) Max | 50 V |
| DC Current Gain (hFE) | 100 – 400 |
| Power Dissipation (Pd) Max | 625 mW |
| Junction Temperature (Tj) Max | 150 °C |
The BC337 can handle a maximum collector current of 800 mA.
The transistor’s DC current gain ranges from 100 to 400.