The ISL6622 is a high frequency MOSFET driver designed to drive upper and lower power N-Channel MOSFETs in a synchronous rectified buck converter topology. The advanced PWM protocol of ISL6622 is specifically designed to work with Intersil VR11.1 controllers and combined with N-Channel MOSFETs, form a complete core-voltage regulator solution for advanced microprocessors. When ISL6622 detects a PSI protocol sent by an Intersil VR11.1 controller, it activates Diode Emulation (DE) and Gate Voltage Optimization Technology (GVOT) operation; otherwise, it operates in normal Continuous Conduction Mode (CCM) PWM mode. In the 8 Ld SOIC package, the ISL6622 drives the upper and lower gates to VCC during normal PWM mode, while the lower gate drops down to a fixed 5.75V (typically) during PSI mode. The 10 Ld DFN part offers more flexibility: the upper gate can be driven from 5V to 12V via the UVCC pin, while the lower gate has a resistor-selectable drive voltage of 5.75V, 6.75V, and 7.75V (typically) during PSI mode. This provides the flexibility necessary to optimize applications.
The ISL6622 is a high‑frequency MOSFET driver designed to drive upper and lower N‑Channel MOSFETs in a synchronous‑rectified buck converter. It supports an advanced PWM protocol that works with Intersil VR11.1 controllers and includes features such as diode emulation, gate‑voltage optimization, and adaptive shoot‑through protection.
Key features include dual MOSFET drives, selectable lower‑gate voltage (5.75 V, 6.75 V, 7.75 V) via an integrated LDO, a 20 kΩ high‑side gate‑to‑source resistor, 3 A sinking capability, and options for 8‑lead SOIC or 10‑lead DFN packages. The datasheet lists electrical specifications, pin functions, timing diagrams, and recommended operating conditions for designers.
| Supply Voltage (VCC, UVCC) | 0–15 V |
|---|---|
| Upper Drive Source Current | 1.25 A |
| Upper Drive Sink Current | 2 A |
| Lower Drive Source Current | 2 A |
| Lower Drive Sink Current | 3 A |
| Selectable Lower Gate Drive Voltage | 5.75 V, 6.75 V, 7.75 V |
| High‑Side Gate‑to‑Source Resistor | 20 kΩ |
It uses an advanced adaptive shoot‑through protection circuit that monitors the gate voltages and inserts a dead‑time, ensuring the upper and lower MOSFETs never conduct at the same time.
The device can sink up to 3 A of current.