The AT49BV640S is a 2.7-volt 32-megabit Flash memory organized as 4,194,304 words of 16 bits each. The memory is divided into 135 sectors for erase operations. The device is offered in a 64-ball CBGA package. The device has CE and OE control signals to avoid any bus contention. This device can be read or reprogrammed
The AT49BV640ST flash memory offers 64 Mbit (4 M × 16) storage in a 64‑ball CBGA package. It operates from 2.65 V to 3.6 V, provides a 70 ns access time, and supports fast word programming (10 ps) with typical sector erase times of 700 ms (32 K) or 100 ms (4 K). Low‑power operation includes 10 mA active current and 15 pA standby current, and the device guarantees at least 100 000 erase cycles.
The device includes a secure‑region lock mechanism that can permanently lock up to 38 regions, with an irreversible freeze feature to prevent further changes. The memory is organized into 135 sectors, and the document lists the full address map for each sector. Packaging details and mechanical dimensions for the 64‑ball CBGA are also provided.
| Operating Voltage | 2.65 V – 3.6 V |
|---|---|
| Access Time | 70 ns |
| Fast Word Program Time | 10 ps |
| Typical Sector Erase Time | 700 ms (32 K) / 100 ms (4 K) |
| Active Current | 10 mA |
| Standby Current | 15 pA |
| Minimum Erase Cycles | 100 000 |
| Memory Size | 64 Mbit (4 M × 16) |
| Package | 64‑ball CBGA |
It operates from 2.65 V to 3.6 V.
The device guarantees a minimum of 100 000 erase cycles.
The standby current is 15 pA.