This document introduces the AT49BV640D(T) storage device's features
The AT49BV640D(T) is a 2.7‑3.6 V, 64‑megabit (4 M × 16) flash memory offered in a 48‑ball CBGA package. It provides 135 erase sectors (127 × 32 K‑word main sectors and 8 × 4 K‑word sectors) with individual write lockout and flexible sector protection.
Key features include fast word programming (10 ps), typical sector erase times of 700 ms (32 K‑word) and 100 ms (4 K‑word), suspend/resume for erase and program operations, low‑power active current of 10 mA, standby current of 15 pA, and a minimum of 100 000 erase cycles. The device supports a VPP pin for accelerated programming and write protection, as well as a RESET pin for device initialization.
| Operating Voltage (Read/Write) | 2.65 V – 3.6 V |
|---|---|
| Access Time | 70 ns |
| Memory Size | 64 megabit (4 M × 16) |
| Fast Word Program Time | 10 ps |
| Typical Sector Erase Time | 32 K‑word: 700 ms; 4 K‑word: 100 ms |
| Active Power Consumption | 10 mA |
| Minimum Erase Cycles | 100 000 |
| Package | 48‑ball CBGA |
The device operates with a read/write voltage between 2.65 V and 3.6 V.
A 32 K‑word sector can be erased in up to 700 ms.
The VPP pin is used for write protection and for accelerated program operation.