This document describes the features and characteristics of the AT49BV802D(T) product, including single voltage read/write operation, access time, sector erase architecture, fast byte/word program time, low-power operation, etc.
The AT49BV802D(T) is an 8‑megabit Flash memory organized as 524,288 words of 16 bits (1 Mbyte) and offered in 48‑lead TSOP and 48‑ball CBGA packages. It supports single‑voltage read/write operation, sector‑erase architecture, and in‑system programming with suspend/resume capabilities.
Key features include a 2.65 V‑to‑3.6 V operating range, 70 ns access time, fast program/erase times, low‑power active and standby currents, a 128‑bit protection register, and a minimum of 100 k erase cycles. The device provides status bits for program/erase monitoring and supports sector lockdown for secure code storage.
| Operating Voltage | 2.65 V to 3.6 V |
|---|---|
| Access Time | 70 ns |
| Sector Erase Architecture | 15 × 32 K‑word (64 KB) + 8 × 4 K‑word (8 KB) sectors |
| Fast Program Time | 10 ps |
| Fast Erase Time | 100 ms |
| Low‑Power Consumption | 10 mA active, 15 pA standby |
| Minimum Erase Cycles | 100,000 |
| Package Options | 48‑lead TSOP or 48‑ball CBGA |
The device operates from 2.65 V up to 3.6 V.
It is rated for a minimum of 100,000 erase cycles.
The memory is offered in a 48‑lead TSOP and a 48‑ball CBGA package.
Use the Erase Suspend command; the device pauses the erase within a maximum of 15 µs.