AT49BV160S(T) is a 2.7V 16Mbit Flash memory from Atmel with 39 sectors for erase operations.
This document provides a concise overview of the AT49BV160ST 16‑megabit flash memory, including its voltage range, access time, sector architecture, power consumption and protection features. It also describes the pin functions and the 64‑ball CBGA package dimensions.
Key sections include a feature list, a detailed description of the memory organization, pin configuration tables, sector address tables, and packaging information for the CBGA package.
| Read/Write Voltage Range | 2.65 V to 3.6 V |
|---|---|
| Access Time | 70 ns |
| Fast Word Program Time | 10 ps |
| Typical Sector Erase Time (32 K Word) | 700 ms |
| Active Current | 10 mA |
| Minimum Erase Cycles | 100 000 |
| Memory Size | 16 Mbit (1 M × 16) |
| Package Type | 64‑ball CBGA |
It operates with a single voltage between 2.65 V and 3.6 V.
The device is rated for a minimum of 100 000 erase cycles.
It is supplied in a 64‑ball CBGA (Chip‑Scale Ball Grid Array) package.