AT49BV160D(T) is a 16-megabit Flash memory with a 32K word (64K byte) sector erase architecture with individual write lockout. It features a fast word program time (10 microseconds) and fast sector erase time (100 milliseconds). The device can be read or reprogrammed using a single power supply, making it ideal for in-system programming.
The AT49BV160D(T) is a 2.7‑3.6 V, 16‑Mbit (1M × 16) flash memory offered in a 48‑lead TSOP package. It provides 39 individually lockable sectors, flexible sector protection, and a common flash interface (CFI). The device supports in‑system programming with single‑voltage read/write operation and includes suspend/resume features for erase and program operations.
Key features include low‑power operation (10 mA active, 15 pA standby), a 128‑bit protection register, minimum 100 k erase cycles, and VPP‑controlled write protection. The datasheet details pin configurations, command sequences, status register definitions, and packaging dimensions.
| Operating Voltage | 2.65 V to 3.6 V |
|---|---|
| Access Time | 70 ns |
| Fast Sector Erase Time | 100 ms |
| Active Power Consumption | 10 mA |
| Erase Cycles (minimum) | 100,000 |
| Number of Sectors | 39 |
| Package Type | 48‑lead TSOP |
| Protection Register Size | 128 bits |
The device operates from 2.65 V to 3.6 V.
The datasheet specifies a minimum of 100,000 erase cycles.
The memory is divided into 39 individually lockable sectors.
The VPP pin is used for write protection and accelerated program operation.