ADG779 is a monolithic CMOS SPDT (single-pole, double-throw) switch. This switch is designed on a submicron process that provides low power dissipation yet gives high switching speed, low on resistance, and low leakage currents. The ADG779 operates from a single supply voltage of 1.8 V to 5.5 V, has an on-resistance of 2.5 Ω, an on-resistance flatness of 0.75 Ω, a -3 dB bandwidth of greater than 200 MHz, switching times of tON 20 ns and tOFF 6 ns, and typical power consumption of less than 0.01 μW. It is compatible with TTL/CMOS.
The ADG779 is a monolithic CMOS SPDT switch designed for low power dissipation and high switching speed. It operates from a single supply of 1.8 V to 5.5 V and is offered in a 6‑lead SC70 package.
Key features include a typical on‑resistance of 2.5 Ω, on‑resistance flatness of 0.75 Ω, switching times of 14 ns (on) and 6 ns (off), and a –3 dB bandwidth greater than 200 MHz. The device is TTL/CMOS compatible and suitable for battery‑powered, communication, audio, video and reed‑relay replacement applications.
| Supply voltage range | 1.8 V to 5.5 V |
|---|---|
| On‑Resistance (Ron) typical | 2.5 Ω |
| On‑Resistance flatness | 0.75 Ω typ |
| Bandwidth (‑3 dB) | 200 MHz |
| Power consumption | <0.01 pW typical |
| Package | 6‑lead SC70 |
The ADG779 operates from a single supply of 1.8 V to 5.5 V.
The typical on‑resistance is 2.5 Ω.
The –3 dB bandwidth is greater than 200 MHz.