The document describes the features and characteristics of DS1245Y/AB 1024k Nonvolatile SRAM, including minimum 10 years data retention, automatic data protection during power loss, unlimited write cycles, etc.
The Maxim DS1245Y/AB is a 1024‑kbit (1,048,576‑bit) nonvolatile SRAM that integrates a self‑contained lithium energy source for data retention without power. It offers unlimited write cycles, low‑power CMOS operation, and optional industrial temperature range.
The device is available in a 32‑pin DIP package and a 34‑pin PowerCap Module (PCM) for surface‑mount applications. Detailed electrical characteristics, absolute maximum ratings, and ordering information are provided for both commercial and industrial versions. This manual is written in Chinese.
| Storage capacity | 1,048,576 bits (1024 kbit) |
|---|---|
| Data retention time | 10 years |
| Operating temperature (industrial) | -40 °C to +85 °C |
| Access time (tACC) | 70 ns |
| Write pulse width (tWP) | 55 ns |
It retains data for at least 10 years without external power.
The industrial version operates from –40 °C to +85 °C.
It is offered in a 32‑pin DIP package and a 34‑pin PowerCap Module (PCM).