The RA30H4047M1 is a 30-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 400- to 470-MHz range.
The RA30H4047M1 is a 30‑watt RF MOSFET Amplifier Module designed for 12.5‑volt mobile radios operating in the 400‑470 MHz band. It features enhancement‑mode MOSFET transistors, a compact 67 × 19.4 × 9.9 mm package, low‑power control current (1 mA) and a metal shield that simplifies spurious radiation control.
The module requires careful mechanical handling, ESD protection, and proper thermal design. Recommended mounting uses M3 screws with a 4.0‑6.0 kgf‑cm torque, athermal compound between the module and heat sink, and a heat‑sink thermal resistance of about 0.67 °C/W to keep the case temperature below 90 °C. Soldering should be performed below 350 °C for less than 3 seconds, and only compatible fluxes may be used.
| Frequency Range | 400‑470 MHz |
|---|---|
| Output Power | 30 W |
| Gate Voltage (Vea) | <12.5 V |
| Input Power | 100 mW |
| Total Efficiency | 42 % |
| Package Size | 67 × 19.4 × 9.9 mm |
| Low‑Power Control Current | 1 mA (typ) |
| Operating Temperature Range | -30 °C to +100 °C |
| RoHS Compliance | Yes |
M3 screws are recommended with a tightening torque of 4.0 to 6.0 kgf‑cm.
Solder the leads after the module is screwed to the heat sink, keeping the solder temperature below 350 °C and the soldering time under 3 seconds.
The module is sensitive to ESD voltages down to 1000 V, so appropriate ESD protection measures must be taken.