RA13H3340M is a 13-watt RF MOSFET Amplifier Module for 12.5-volt mobile radios that operate in the 330- to 400-MHz range. It can be directly connected to the battery's negative pole without external bias voltage, and the output power can reach up to 13W at a relatively low voltage. It has the advantages of low power consumption and high efficiency.
The RA13H3340M RF Power Module is a two‑stage 13‑W MOSFET amplifier designed for 12.5‑volt mobile radios in the 330‑400 MHz band. It features enhancement‑mode MOSFET transistors, low‑power gate control (≈1 mA at VGG=5 V), and a total efficiency of about 40 %.
The module is mounted on a heat sink with a flatness better than 50 µm, using M3 screws torqued to 4‑6 kgf‑cm, and then soldered to the PCB. Safety notes include ESD sensitivity down to 1000 V, high‑temperature handling warnings, and compliance with RoHS directives.
| Frequency Range | 330‑400 MHz |
|---|---|
| Output Power | 13 W |
| Total Efficiency | 40 % |
| Gate Current (IGG) | 1 mA (typical at VGG=5 V) |
| Drain Voltage (VDD) | 17 V (max) |
| Input Power (Pin) | 100 mW |
| Storage Temperature Range | -40 °C to +110 °C |
| Module Size | 66 × 21 × 9.88 mm |
The nominal 13 W output power is available at a typical gate voltage of about 4.5 V and a maximum of 5 V.
The MOSFET module is sensitive to ESD voltages down to 1000 V, so appropriate ESD protection measures must be taken.