RA30H4047M-101 is a 30W 12.5V RF power amplifier module from Texas Instruments, operating in the 400-470MHz range, with enhancement-mode MOSFET transistors.
The RA30H4047M is a 30‑watt RF MOSFET amplifier module for 12.5‑V mobile radios operating in the 400‑470 MHz band. It uses enhancement‑mode MOSFET transistors, offers low‑power gate control (≈1 mA at 5 V) and can be used for both non‑linear FM and linear AM modulation by adjusting gate voltage and input power.
The document details recommended mounting, thermal design, and safety precautions. A flat heat‑sink surface (< 50 µm) and appropriate thermal compound are required, and the module is sensitive to ESD down to 1000 V. Proper soldering temperatures (< 350 °C) and solvent avoidance are also specified.
| Frequency Range | 400‑470 MHz |
|---|---|
| Output Power | 30 W |
| Total Efficiency | 40 % |
| Gate Current (IGG) | 1 mA (typical at 5 V) |
| Input Power (Pin) | 50 mW |
| Module Size | 66 × 21 × 9.88 mm |
| Recommended Heat‑Sink Flatness | < 50 µm |
| ESD Sensitivity | down to 1000 V |
Around 4.5 V (typical) to 5 V (maximum) the nominal output power becomes available.
The heat‑sink flatness should be less than 50 µm to avoid cracking the ceramic substrate.
The MOSFET module is sensitive to ESD voltages down to 1000 V, so proper precautions are required.