RA07H4452M is a 7-watt RF MOSFET amplifier module from RASilicon. It can be used for 12.5-volt portable radios and operates in the 440- to 520-MHz range.
The RA07H4452M is a 7‑watt RF MOSFET amplifier module for portable radios operating in the 440‑520 MHz band. It uses enhancement‑mode MOSFET transistors and can be driven directly from a 12.5 V battery. Output power and drain current increase with gate voltage, reaching nominal levels at about 3 V (typical) to 3.5 V (maximum).
The module is built on an alumina substrate with a copper flange, protected by a plastic cap. It requires careful handling to avoid ESD, mechanical stress, and improper soldering. Recommended mounting includes a flat heat sink, thermal compound, and M2.6 screws tightened to 1.8‑3.0 kgf‑cm. RoHS compliance is indicated by a “G” after the lot marking.
| Frequency Range | 440‑520 MHz |
|---|---|
| Total Efficiency | 40 % |
| Gate Current | 1 mA (typical) |
| Module Size | 30 × 10 × 5.4 mm |
| Package Code | H46S |
| Drain Voltage (Vop) | ≤ 13.2 V |
| Gate Voltage (Vac) | ≤ 3.5 V |
| Input Power (Pin) | 20 mW |
| Recommended Mounting Torque | 1.8‑3.0 kgf‑cm |
| ESD Sensitivity | down to 1000 V |
Nominal output power is available when the gate voltage is around 3 V (typical) to 3.5 V (maximum).
RoHS compliance is indicated by the letter “G” after the lot marking.
The mounting screws should be tightened to a torque of 1.8 to 3.0 kgf‑cm.
For long‑term reliability the module case temperature should be kept below 90 °C (recommended below 60 °C under standard conditions).