The document describes the RA45H4045MR silicon RF power module, which is designed for 12.5V mobile radios operating in the 400-450MHz range. The module features enhancement-mode MOSFET transistors, with an output power greater than 45W, a wide frequency range, and the ability to support both linear and non-linear modulation.
The RA45H4045MR is a three‑stage RF power amplifier module designed for 12.5 V mobile radios operating in the 400‑450 MHz band. It uses enhancement‑mode MOSFET transistors and provides up to 45 W output power with low control current.
The datasheet includes electrical ratings, typical performance curves, mechanical dimensions, recommended mounting procedures, and safety precautions for reliable integration into RF equipment.
| Frequency Range | 400 – 450 MHz |
|---|---|
| Output Power | 45 W |
| Drain Voltage (Vpp) | ≤5 V |
| Gate Voltage (Vea) | ≤12.5 V |
| Input Power (Pin) | 100 mW |
| Total Efficiency | 35 % |
| Module Size | 66 × 21 × 9.88 mm |
| Low‑Power Control Current | 1 mA (typ) at Veg=5 V |
| Package Code | H2RS |
| RoHS Compliance | Yes (RA45H4045MR‑101) |
The module measures 66 mm × 21 mm × 9.88 mm.
M83 screws with a tightening torque of 4.0 to 6.0 kgf‑cm are recommended.
The module case temperature should be kept below 90 °C for long‑term reliability.