RA30H4452M is a 30-watt, 12.5-volt mobile radio RF power module from Silicon RF. It operates in the 440- to 520-MHz range.
The RA30H4452M is a 30‑watt RF MOSFET power‑amplifier module designed for 12.5 V mobile radios covering the 440‑520 MHz band. It uses enhancement‑mode MOSFET transistors, offers a low‑power control current of about 1 mA at 5 V gate voltage, and can be operated in both non‑linear FM and linear AM modes.
The module is built on an alumina substrate with a copper flange, protected by a plastic cap. Recommended mounting includes M3 screws torqued to 4.0‑6.0 kgf‑cm, a flat heat‑sink (≤50 µm) with athermal compound, and careful ESD handling (sensitive down to 1000 V). Safety notes stress avoiding mechanical stress, high temperature, and improper flux solvents.
| Frequency Range | 440‑520 MHz |
|---|---|
| Output Power | 30 W |
| Drain Voltage (Vpp) | 12.5 V |
| Gate Voltage (Vaa) | <5 V (typical 4‑5 V for nominal power) |
| Input Power (Pin) | 100 mW |
| Total Efficiency | 40 % |
| Gate Current | 1 mA (typ) |
| Package Dimensions | 66 × 21 × 9.8 mm |
| Operating Temperature Range | -30 °C to +110 °C |
| Storage Temperature Range | -40 °C to +110 °C |
| Thermal Resistance (case‑air) | 0.67 °C/W |
Around 4.5 V typical and up to 5 V maximum gate voltage provides the nominal 30 W output power.
The module is sensitive to ESD voltages down to 1000 V and requires appropriate ESD precautions.
M3 screws with a tightening torque of 4.0 to 6.0 kgf‑cm are recommended.
A thermal resistance of about 0.67 °C/W (case‑air) is recommended for reliable operation.