This document describes the features and characteristics of MITSUBISHI PHOTO DIODES PD7XX7 series InGaAs PIN photodiodes. The series is suitable for receiving light in the wavelength range of 1000 to 1600nm. It features high-speed response and high quantum efficiency, making it suitable for light receiving elements in optical fiber communication systems.
The PD7XX7 series are InGaAs PIN photodiodes with a 40 µm active diameter, designed for optical fiber communication systems. They operate over a wavelength band of 1000‑1600 nm and offer high‑speed response and high quantum efficiency.
Key electrical and optical characteristics include a reverse voltage rating of 20 V, reverse current of 500 pA, forward current of 2 mA, capacitance around 0.8 pF, dark current as low as 0.05 nA, responsivity up to 0.90 A/W at 1300 nm, and a cut‑off frequency of about 2.5 GHz. Mechanical outline drawings for each model are also provided.
| Active diameter | 40 µm |
|---|---|
| Wavelength band | 1000‑1600 nm |
| Reverse voltage (Vr) | 20 V |
| Reverse current (Ir) | 500 pA |
| Forward current (If) | 2 mA |
| Case temperature range | -40 °C to +85 °C |
| Storage temperature range | -40 °C to +100 °C |
The PD7XX7 series operates over a wavelength band of 1000 to 1600 nm.
The maximum reverse voltage rating is 20 V.
Typical dark current is 0.05 nA at a reverse bias of 5 V.