The CM900HC-90H is a high power switching insulated gate bipolar transistor module produced by Mitsubishi Electric. Its maximum collector current is 900A, its maximum collector-emitter voltage is 4500V, and it has an insulated type and single-unit package. It is used in traction drives, high reliability converters/inverters, DC choppers and other fields.
The CM900HC-90H is a 3rd‑generation high‑voltage IGBT module designed for high‑power switching applications such as traction drives, converters, inverters and DC choppers. It features an insulated type construction with a single element per pack and an AISiC baseplate.
The document provides maximum ratings, electrical, thermal and mechanical characteristics, performance curves, capacitance data, switching times and safe operating area limits, enabling engineers to select and integrate the module into high‑power systems.
| Continuous collector current (Ic) | 900 A |
|---|---|
| Junction temperature range | -40 °C to +150 °C |
| Storage temperature range | -40 °C to +125 °C |
| Thermal resistance (junction‑to‑case, IGBT) | 10.5 K/kW |
| Mounting torque (M6 screw) | 3.0‑6.0 N·m |
| Mass | 1.5 kg |
It can carry a continuous collector current of 900 A (DC) and up to 1800 A in pulse mode.
The junction temperature may operate from –40 °C up to +150 °C, with a storage range of –40 °C to +125 °C.